Abstract
Aluminum oxide(<TEX>$Al_2O_3$</TEX>) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since <TEX>$Al_2O_3$</TEX> has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, <TEX>$Al_2O_3$</TEX> layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form <TEX>$Al_2O_3$</TEX> to reduce the process time. <TEX>$Al_2O_3$</TEX> synthesized by ALD on c-Si (100) wafers contains a very thin interfacial <TEX>$SiO_2$</TEX> layer, which was confirmed by FTIR and TEM. To improve passivation quality of <TEX>$Al_2O_3$</TEX> layer, the deposition temperature was changed in range of <TEX>$150{\sim}350^{\circ}C$</TEX>, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in <TEX>$250^{\circ}C$</TEX>, <TEX>$400^{\circ}C$</TEX> and 10 min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of <TEX>$Al_2O_3$</TEX> deposited on p-type silicon.
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