Abstract
Studies on after-etching for 10MHz class Ge alloyed junction type element was reported by the author in the following two previous papers;Part 1: {Alkaline Electrolytic Etching Alkaline Electrolytic Etching Combined with Acid Chemical EtchingPart 2: Improved Acid Chemical EtchingThis paper reports that stabilization and reliability of the electric characteristics of these sample transistors were tested by keeping them in a furnace at 90°C for 10, 000hrs.The deviation of parameters of electric characteristice after the thermal test was analyzed. It was confirmed that the highest reliability in stationary electric parameters was obtained by the technique of the improved acid chemical etching. The acid chemical etchant developed by the author can be available in mass production process.The reaction mechanism on the dissolution of germanium in H2O-H2O2-HF etchant was pursued by the author's model of reaction mechanism.
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