Исследование p-i-n-фотодетектора с поглощающей средой на основе InGaAs/GaAs квантовых яма-точек

Abstract

The static and dynamic characteristics of waveguide photodetectors with an absorbing region based on InGaAs/GaAs quantum well-dots were studied at room temperature. The absorption band of InGaAs/GaAs quantum well-dots is in the spectral range from 900 to 1100 nm. The waveguide photodetectors have a width of 50 µm and a length of the absorbing region from 92 µm to 400 µm. A low dark current density (1.1 и 22 μA/cm^2 at -1 и -20 V) and cut off frequency of 5.6 GHz, limited by the time constant of a parasitic equivalent electric RC circuit, were obtained.