정공주입층에 따른 OLED 소자의 발광 특성

Abstract

In this paper, the hole injection layer(HIL) materials have been synthesized and analyzed. Their HOMO levels are <TEX>$4.93{\sim}5.22\;eV$</TEX>, and their energy band gaps are <TEX>$2.74{\sim}3.19\;eV$</TEX>. Their glass transition temperatures(<TEX>$T_g$</TEX>) are all above <TEX>$114^{\circ}C$</TEX>, which implies that they are highly thermal-stable. The green OLED devices with a structure of ITO(150 nm)/NEW_HIL(50 nm)/NPB(30 nm)/<TEX>$Alq_3$</TEX>(50 nm)/Al:Li(100 nm) were fabricated and tested, incorporating these newly synthesized HIL materials. According to the test results of OLED devices, the I-V-L performances of these devices increase in the following sequence: ELM307 > ELM200 > ELM321 > ELM327 > ELM325. In addition, the OLED device with ELM307 as a HIL has the highest brightness and efficiency at the same driving voltage. These experimental results have shown that ELM307 can be used as one of the most promising candidates for HIL materials.