Abstract
Abstractn ^+-Ge/ p ^+-Si(001) epitaxial structures are grown by hot-wire chemical vapor deposition from GeH_4 at a low substrate temperature (~325°C). Prototype tunnel diodes allowing for monolithic integration into Si-based integrated circuits are formed based on these structures. Doping of the n ^+-Ge layers with a donor impurity (P) to a concentration of >1 × 10^19 cm^–3 is performed via the thermal decomposition of GaP. Distinct regions of the negative differential resistance are observed in the current–voltage characteristics of tunnel diodes.
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