Abstract
The electronic structure of the AlN surface and the ultrathin K/AlN interface was studied using in situ photoelectron spectroscopy under ultra-high vacuum conditions. Core level spectra from the N 1s, Al 2p and K 3p and from the valence band were studied for the clean AlN surface and for the K/AlN interface in the regime of K submonolayer coatings. During K adsorption, significant changes in all the spectra were found. Surface states in the valence band region below the EVBM were found. It was determined that the K/AlN interface has the semiconductor-like character.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
