電子エネルギー分布関数に及ぼすクーロン衝突の効果(J11-2 量子・分子熱流体工学(2),J11 量子・分子熱流体工学)

Abstract

Plasma etching is a typical technique in materials processing. Radicals resulting from electron-molecule collisions play a crucial rule in the etching. The production rate of radicals is governed by the electron energy distribution function(EEDF). Effect of electron-electron collision in the EEDF's is examined using Bobylev and Nanbu's theory (Phys.Rev.E, Vol.61(2000),4576-4586)