Abstract
ITO and ITO:Ce films were deposited by DC magnetron sputtering using an ITO (<TEX>$SnO_2$</TEX>: 10 wt%) and <TEX>$CeO_2$</TEX> doped ITO (<TEX>$CeO_2$</TEX>: 0.5, 3.0, 4.0 and 6.0 wt%) ceramic targets, respectively, on unheated polyethylene terephthalate (PET) substrates. The lowest resistivity <TEX>$6.7{\times}10^{-4}{\Omega}cm$</TEX> was obtained from ITO:Ce film deposited using <TEX>$CeO_2$</TEX> (3.0 wt%) doped ITO target. On hte other hand, ITO:Ce (0.5wt%) film has the excellent mechanical durability which was evaluated by bending test. This result was attributed to the higher binding energy of <TEX>$CeO_2$</TEX> compared to <TEX>$SnO_2$</TEX> and <TEX>$In_2O_3$</TEX>. Therefore, <TEX>$CeO_2$</TEX> atoms have a small displacement caused by the bombardment of high energy particles, and it attribute to the increase in adhesion caused by decrease in internal stress. The average transmittance of the films was more than 80% in the visible region.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of the Korean institute of surface engineering
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
