Abstract
The behaviours and properties of a defect introduced into high purity p-type silicon by γ-irradiation at 82°K, which is considered to be a single vacancy, were investigated by means of Hall coefficient and resistivity measurements. It anneals out between about 150°K and about 220°K. This defect shows a character of net acceptors, of which the predominant energy level is located at about 0.2 eV above the valence band. This means that the 5 electron model of a single vacancy should be adopted. Some experimental results pertinent to divacancies in p-type silicon were also obtained.
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