Abstract
Transparent and conducting pure and Ga-doped ZnO films prepared by e-beam evaporation in vacuum were irradiated at room temperature by Co60 radiation source with the γ-photon average energy of 1.25 MeV and with different doses up to ∼600 kGy. The energy band gap E g, electrical resistivity, carrier density as well as the structure parameters of pure and doped ZnO films versus the impurity content and γ-doses were determined in order to estimate the radiation-induced degradation effect on ZnO-based films used as transparent electrodes for electro-optical device applications.
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