Abstract
We report experimental study of phosphorus desorption from epi-ready InP(001) substrates during high-temperature annealing in an arsenic flux. InPAs solid solution and InAs islands form on the surface in the process of annealing. The original method is proposed for determining the number of phosphorus atoms desorbing from the surface by determining the number of arsenic atoms in the InPAs solid solution and InAs islands. The flux of phosphorus desorbing from the surface increases from 1 · 10−4 monolayer · cm−2· s−1 at 500◦C annealing temperature to 7.3 · 10−4 monolayer · cm−2· s−1 at 540◦C. The activation energy of the phosphorus desorption process is 2.7 ± 0.2 eV
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