Abstract
The electroluminescent characteristics of the InAs/InAs1−ySby /InAsSbP asymmetric light-emitting diode heterostructures with high InSb mole fraction in the active region (y > 0.09) in the temperature range 4.2−300 K have been studied. Stimulated emission was achieved in the wavelength range 4.1−4.2 μm at low temperatures (T < 30 K). It was found that the electroluminescence spectra were formed as a result of the superposition of contributions from different channels of radiative recombination of charge carriers near the type II heterointerface. The effect of the quality of the type II InAsSb/InAsSbP heterojunction on the radiative interface transitions with an increase in the content of InSb in the ternary solid solution is considered.
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