Рост интенсивности сигнала люминесценции самоформирующихся наноостровков Ge(Si) за счет взаимодействия их излучения с модами двумерных фотонных кристаллов

Abstract

Investigations of the photoluminescence (PL) response of 2D photonic crystal slabs with embedded Ge(Si) quantum dots are reported. It was shown that it is possible to obtain the large enhancement of the PL intensity from the active medium (Ge(Si) quantum dots) in the wavelength range of 1.2-1.6 mkm. Features of the PL response associated with the interaction with photonic crystal modes located near the Γ point of the Brillouin zone are studied. It was shown that both relatively wide lines associated with the leaky modes of the photonic crystal and rather narrow resonances with the Q factor exceeding 103 could be observed. The latter sharp resonances could be detected in the specific range of the photonic crystal lattice parameters.