Abstract
Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new semiconductor system requires a concerted effort by the community to address technical barriers which limit performance. Due to the favorable intrinsic material properties of gallium oxide, namely, critical field strength, widely tunable conductivity, mobility, and melt-based bulk growth, the major targeted application space is power electronics where high performance is expected at low cost. This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of people active within the gallium oxide research community. Addressing these challenges will enhance the state-of-the-art device performance and allow us to design efficient, high-power, commercially scalable microelectronic systems using the newest semiconductor platform.
Highlights
The wafer size is limited to 100 mm. Another emerging class of devices are based on AlGaN/GaN high-electron-mobility transistors (HEMTs), which can be built on low-cost 200 mm Si wafers on which a thin (∼few μm) GaN-based layer is grown by metal organic chemical vapor deposition (MOCVD).[2]
For Pulse Width Modulated (PWM) converters, the switch rise and fall times must be negligible as compared to both carrier frequency and minimum duty cycle—this is important to maintain low switching losses
halide vapor phase epitaxy (HVPE) or MOCVD is a candidate of the epitaxial growth method for vertical power devices that require a thick film, while MOCVD or molecular beam epitaxy (MBE) is a candidate for lateral power devices that require a film with a flat surface
Summary
A materials result has the power to rally the research community around a new semiconductor technology. The large bandgap and field strength have created a new set of problems for materials and device researchers. To this date, avalanche breakdown has not been measured in β-Ga2O3. This enabled the device community to make quick strides in fabricating high performance devices. For each chapter in this Roadmap, the state of the art is described briefly followed by an analysis of the most important technical barriers in each respective section This serves as a call to action, for if the community can address these barriers, it will enable β-Ga2O3 to be the commercialized semiconductor. AN OUTLOOK TO THE COMMERCIAL MARKET OPPORTUNITIES OF β-Ga2O3 BASED POWER DEVICES
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