Abstract
The possibility of lateral Ga (In) AsP nanostructures grown by a catalytic method in a quasi-closed volume from phosphorus and indium vapors on the GaAs (100) surface as an antireflection coating for photovoltaic devices is considered for the first time. It is shown that at fixed growth temperature, it is possible to control the surface morphology by changing the growth time. The surface morphology was investigated by scanning electron and atomic force microscopy. The dependence of surface reflection coefficient in the range of 400-800 nm on the surface structure is shown. The use of such coating in GaAs-based photocells demonstrated a significant increase in the external quantum yield of photoconverters.
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