β‐Ga2O3/p‐Type 4H‐SiC Heterojunction Diodes and Applications to Deep‐UV Photodiodes

Abstract

Here, pn heterojunction diodes based on β‐Ga2O3/p‐type 4H‐SiC structures are fabricated. The current–voltage characteristics of the diodes are measured in the temperature range from 23 to 500 °C. These diodes exhibit good rectification properties and stability under high temperatures. The rectification ratios exceed 1000 even at 500 °C. Deep‐ultraviolet (deep‐UV) photodiodes are fabricated on the basis of heterojunctions having various β‐Ga2O3 thicknesses, which present the maximum responsivity at 250–260 nm and respond to UV pulses as short as ≈30 μs in real time.