Abstract
For the first time in the literature, a p-n junction photodiode based on β-Ga2O3 nanoflakes was fabricated on p-Si by two stage hydrothermal (nucleation and crystal growth) deposition method. The photodiode exhibited an excellent rectifying ratio of 1387 at ±10 V. The value of responsivity to ultraviolet (UV) light was 0.16 mA/W (at 0 V) and 17.1 A/W (at -10 V), respectively. The device showed a characteristic of a self-powered device. Furthermore, this study unveiled several advantages of usage of β-Ga2O3 nanoflakes to boost the performance of self-powered photodiodes.
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