Abstract
Department of Energy Semiconductor Engineering, Far East University, Eumseong369-700, Korea(Received July 19, 2015; Accepted July 24, 2015)Abstract: Power semiconductor device has a very long history among semiconductor, since the invention of low-pressure bipolar transistor 1947, and so far from small capacity to withstand voltage-current, high-speed and high-frequency characteristics have been developed with high function. In this study, the PWM IC Switch to the main parts used in IGBT (insulated gate bipolar transistor) for the low power loss and high drive capability of the simulator to Synopsys' T-CAD used by the 1,700 V NPT Planar IGBT, 1,700 V FS was a study of the Planar IGBT, the results confirmed that IGBT 1,700 V FS Planar is making about 11 percent less than the first designed NPT Planar IGBT.Keywords: Power device, IGBT, Power switching, Breakdown voltage, Field stop *+,70년대에서 성능이 우수한 자동 전력 전자 스위칭 소자 GTR (giant transistor), GTO (gate turn off thyristor), MOSFET (metal oxide semiconductor field effect transistor), IGBT (insulated gate bipolar transistor) 등이 널리 사용되고 있다 [1,2]. 파워 반도체 소자는 반도체 중에서도 매우 오랜 역사를 가지고 있으며, 1947년 바이폴라 트랜지스터의 발
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