Abstract
Nanocrystalline TiN films were deposited on Si(100) substrate using asymmetric pulsed DC reactive magnetron sputtering. We investigated the growing behavior and the structural properties of TiN films with change of duty cycle and pulsed frequency. Grain size of TiN films were decreased from 87.2 nm to 9.8 nm with decrease of duty cycle. The 2θ values for (111) and (200) crystallographic planes of the TiN films were also decreased with decrease of duty cycle. This shift in 2θ could be attributed to compressive stress in the TiN coatings. Thus, the change of plasma parameter has a strong influence not only on the microstructure but also on the residual stresses of TiN films.
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