적외선 센서용 [(Co1-xCux)0.2(Ni0.3Mn0.7)0.8]3O4스피넬 박막의 구조 및 전기적 특성

Abstract

Co1-xCux)0.2(Ni0.3Mn0.7)0.8)3O4 (0≤x≤1) thin films prepared by metal organic decomposition process were fabricated on SiN/Si substrate for infrared sensor application. Their structural and electrical properties were investigated with variation of Cu dopant. The ((Co1-xCux)0.2(Ni0.3Mn0.7)0.8)3O4 (CCNMO) film annealed at 500℃ exhibited a dense microstructure and a homogeneous crystal structure with a cubic spinel phase. Their crystallinity was further enhanced with increasing doped Cu amount. The 120 nm-thick CCNMO (x=0.6) thin film had a low resistivity of 53 Ω·cm at room temperature while the Co-free film (x=1) showed a significantly decreased resistivity of 5.9 Ω·cm. Furthermore, the negative temperature coefficient of resistance (NTCR) characteristics were lower than -2%/℃ for all the specimens with x≥0.6. These results imply that the CCNMO (x≥0.6) thin films are a good candidate material for infrared sensor application.