나노급 CMOSFET을 위한 Boron Cluster(B18H22)가 이온 주입된(SOI 및 Bulk)기판에 Ni-V합금을 이용한 Ni-silicide의 열안정성 개선

Abstract

In this paper, the formation and thermal stability characteristics of Ni silicide using Ni-V alloy on Boron cluster (<TEX>$B_{18}H_{22}$</TEX>) implanted bulk and SOI substrate were examined in comparison with pure Ni for nano-scale CMOSFET. The Ni silicide using Ni-V alloy on <TEX>$B_{18}H_{22}$</TEX> implanted SOI substrate after high temperature post-silicidation annealing showed the lower sheet resistance, no agglomeration interface image and lower surface roughness than that using pure Ni. The thermal stability of Ni silicide was improved by using Ni-V alloy on <TEX>$B_{18}H_{22}$</TEX> implanted SOI substrate.