Структура, соcтав и свойства кремния, имплантированного ионами цинка и кислорода при повышенной температуре

Abstract

The Czochralski growth Si (100) substrates were implantation by 64Zn+ ions with dose of 5×10^16 cm−2 and energy of 50 keV and then by the 16O+ ions with dose of 2×10^17 cm−2 and energy of 20 keV. During implantation the substrate temperature was about 350◦C. Then, the substrates were cut into 10×10mm samples, and were subjected to isochronous (for 20min) photonic annealing in vacuum. At each stage of photon annealing, the effective temperature was varied from 500 up to 900◦C with a step of 100◦C. After implantation the radiation-induced point defects and their clusters are formed in the subsurface layer, twin grains, dislocations, as well as Zn-containing clusters (mainly of Zn and ZnO composition) with an average size of 10−20nm and an average size of 20−50 nm on Si substrate surface. As the annealing proceeds, the radiation defects gradually disappear, and after annealing at an effective temperature of 700◦C the Zn-containing clusters (presumably consisted of ZnO phase and particularly of Zn2SiO4 phase) with a size of about 100 nm are revealed in the surface layer and on the Si substrate surface.