Abstract

AbstractHigh-resistance photosensitive crystals of Bi_12SiO_20 (BSO) doped with iron ions were studied. X-ray diffraction analysis reveals the compression of a unit cell in a BSO : Fe crystal with increasing impurity concentration. Electron paramagnetic resonance demonstrates a decrease in the intensity of the EPR signal when the BSO: Fe crystal is exposed to light that generates photocarriers. It is found that the characteristic time of the EPR signal decrease is close to the value of the Maxwellian relaxation time measured with the help of the longitudinal electrooptical effect. A physical model of the mechanism of optical charge exchange of magnetic iron centers is discussed, based on the statement that the nature of the crystal bonds of the iron ion with ligands without structural modification of the crystal lattice changes during the photogeneration of carriers. A physical model is proposed, according to which a trivalent Fe^3+ ion transforms into a divalent state of Fe^2+ with a change in the total spin from 5/2 to 2. The compression of the unit cell with increasing iron ion concentration in the framework of the model under discussion is due to the transformation of atomic orbitals upon replacement of silicon ions by iron ions. The transformation process affects the cells unoccupied by iron, which is proved by the absence of a bifurcation of X-ray reflections and indicates the long-range nature of the intracrystalline interactions in sillenites.

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