δ-Bi 2O 3 thin films prepared by reactive sputtering: Fabrication and characterization

Abstract

Nanocrystalline δ-Bi 2O 3 thin films have been successfully prepared by radiofrequency reactive magnetron sputtering on Si(100) substrate using pure Bi as target. The influences of the oxygen flow ratio in the working gas and substrate temperature on the structures and phase components of the thin films were studied. The X-ray diffraction and transmission electron microscope analyses confirmed that the δ-Bi 2O 3 thin films with high quality are obtained at substrate temperature of about 200 °C and oxygen flow ratio between 5% and 10%. The absorption edge of the films has a strong blue shift with increasing the O 2 flow ratio due to the quantum confinement effect and it was considered that the indirect allowed transition dominates in the δ-Bi 2O 3 thin films. The nanocrystalline nature of the δ-Bi 2O 3 thin films is responsible for the stabilization of high temperature phase in ambient temperature.