Abstract
On the basis of the studies carried out, it is shown in the work that the influence of oxygen on the optical properties of А2В6 crystals is determined by three main effects. This is the formation of a system of bound excitons accompanying the presence of high oxygen concentrations at stacking faults — a long-wavelength shift by hundreds of meV of the absorption edge, and the third effect is determined by the emergence of broadband “self-activated” SA luminescence in the near-edge region of the spectrum. This work introduces the concept of a non-uniform distribution of isoelectronic oxygen centers in the bulk of crystals, both due to their predominant segregation at stacking faults and in these layers of stacking faults. To analyze the optical data, we used the capabilities of the method for constructing band models, which collects extensive and multilateral information about specific samples. A new refined model of the CdS ∙ O multizone with stacking faults is presented. The paper describes the conditions and the possibility of joint and separate observation of these features in the spectra of different crystals А2В6 and using them to create lasers.
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