スパッタ成膜中の Ar, Xe イオン衝撃が Ni 薄膜の特性に及ぼす影響

Abstract

Previously, as a means of expressing the effect of ion bombardment, we proposed an ion bombardment parameter Pi based on the magnitude of the ion momentum and impingement ratio of Ar ions to metal particles. As a result the internal stress of the ferromagnetic films can be controlled by ion bombardment parameter Pi. In this study, molecular mass effects with various sputtering gases such as Ar and Xe on magnetic thin films are quantitatively discussed with ion bombardment parameter Pi. The Ni thin films were prepared by the D.C. magnetron sputtering process. Sputtering gases were using Argon (Ar) and Xenon (Xe). Plasma diagnostics was carried out by single Langmuir-probe during the sputter deposition. The internal stress of the films varies linearly with ion bombardment parameter Pi, regardless of the sputtering gas species. In addition, the magnetostrictive susceptibility of the film is also dependent on Pi. Internal stress and magnetostrictive properties of Ni thin films could be controlled with ion bombardment parameter Pi.