Abstract
This paper introduces the features and basic principles of the representative spintronics devices-MRAM, spin FET and circular light LED, especially which are fabricated by ferromagnetic semiconductors. It implies that the development of room temperature ferromagnetic semiconductor is very important towards the realization of semiconductor spintronics devices. The properties of transition metal (Cr) and rare-earth element (Gd) doped GaN, which show ferromagnetism at room temperature, are reviewed. The observation of TMR effect in GaCrN/AlN/GaCrN trilayer shows the possibility of GaN-based room temperature ferromagnetic semiconductor for semiconductor spintronics devices.
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