Abstract
It is urgent to establish a new pulsed laser deposition technique to prepare the high-quality transparent conducting film with large area, which is essential to put into practice. We have attempted to fabricate the GZO (ZnO : Ga2O3) films by applying a magnetic field perpendicular to the plume generated between the target and the substrate. When the films were fabricated by applying Nd : YAG laser (λ =532 nm) and the magnetic field at the same time, it was found that the carrier concentration drastically increased and the resistivity remarkably decreased and also the surface morphology was improved. By applying an ArF excimer laser (λ=193 nm) and the magnetic field at the same time, the films with rsistivities of the order of 10-4Ω-cm were obtained at the substrate temperature between room temperature and 350°C. It was proved to be a very useful method for the fabricating of the high-quality transparent conducting films to apply the magnetic field perpendicular to the plume.
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