박막 알루미늄을 이용한 규칙적으로 정렬된 나노급 미세기공 어레이 제조기술 개발

Abstract

An alumina membrane with nano-sized pore array by anodic oxidation using the thin film aluminum deposited on silicon wafer was fabricated. It Is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2 M was used for low voltage anodization under 100 V, the chromic acid with 0.1 M was used for high voltage anodization over 100 V. The nano-sized pores with diameter of <TEX>$60\~120$</TEX> nm was obtained by low voltage anodization of <TEX>$40\~80$</TEX> V and those of <TEX>$200\~300$</TEX> nm was obtained by high voltage anodization of <TEX>$140\~200$</TEX> V. The pore widening process was employed for obtaining the one-channel with flat surface because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of two-channel with rough surface. Finally, the sample was immersed to the phosphoric acid with 0.1 M concentration to etching the barrier layer.