Abstract
This paper descibes on the characteristics of Ta-N(tantalum nitride) ceramic thin-film strain gauges which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-nitrogen atmosphere (Ar-<TEX>$(4{\sim}16%)N_{2}$</TEX>) for high-temperature applications. These films were annealed in <TEX>$2{\times}10^{-6}$</TEX> Torr vacuum furnace at the range of <TEX>$500{\sim}1000^{\circ}C$</TEX>. Optimum deposition atmosphere and annealing temperature were determined at <TEX>$900^{\circ}C$</TEX> for 1 hr. in 8% <TEX>$N_{2}$</TEX> gas flow ratio. Under optimum formation conditions, the Ta-N thin-film for strain gauges was obtained a high-resistivity of <TEX>$768.93{\mu}{\Omega}{\cdot}cm$</TEX>, a low temperature coefficient of resistance (TCR) of -84 ppm/<TEX>$^{\circ}C$</TEX> and a good longitudinal gauge factor (GF) of 4.12.
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