Дисперсия плазменных колебаний в аморфных халькогенидных полупроводниках

Abstract

Thin films of amorphous chalcogenide semiconductors on a silicon crystal are studied by the method of plasma vibration dispersion and the asymmetry of the number of electrons in the zone of formation of the total external reflection of X-rays and the excitation of plasmons is calculated. Loop-like dispersion curves were observed and the average plasmon energies and the associated internal mechanical stresses and polarization of the studied films were determined. The absence of internal mechanical stresses and polarization in an amorphous semiconductor film of molybdenum sulfide is found.