窒素ドープシリコン結晶中のＧｒｏｗｎ‐ｉｎ欠陥形態への窒素の影響

Abstract

We study the morphological change of grown-in defects in nitrogen doped silicon on annealing. The growth of whisker-like defects is identified in nitrogen doped silicon crystals after the hydrogen annealing by transmission electron microscopy observations. Nitrogen and oxygen were detected from these whisker-like defects. It was further observed that the very small whisker like defects themselves became grown-in defects. The whisker-like defects show two structures a distorted diamond and amorphous from the selected area electron diffraction pattern and the high resolution transmission electron microscopy image.