Abstract
Thin films (30 nm thick) with a stack structure (60 layers) of Ga2O3 and ZnO have been deposited onto glass substrates or polycarbonate disk substrates by a pulsed laser deposition method with an ArF excimer laser using a split target made of Ga2O3and ZnO. Transmittance differences Δ T (Tannealed-Tas-deposited) between the annealed state and the asdeposited state for the films fabricated at trace ratio (the ratio of the time required to irradiate each side (Ga2O3 or ZnO) of the target by laser pulses) of 3 : 5 showed a maximum value of 40%. It was recognized by AFM observations that surface roughness Rafor the films was near 0.5 nm. It was found that the value of Ra decreased as the Ga2O3 contents increased. A peak power dependence of CNR of 3T signal (λ = 406 nm, NA = 0.65) at a linear velocity of 5 m/s and a read power of 0.6 mW was measured for the disk samples with 60 layers. The CNR of 53 dB was obtained for the samples prepared with the trace ratio of 1 : 51 : 0.6 at a write power of 3 mW.
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