Abstract

In this paper, we fabricated insulator thin films by plasma polymerization method for organic thin film transistor's insulator layer. For improving the electrical characteristics of organic transistor, we treated the semiconductor thin film with plasma. As results, the surface energy of organic transistor was increased from to and the mobility of organic transistor was increased , that is increased 29% average ratio. Therefore, we have known that oragnic transistor's mobility can improve with plasma treatment of semiconductor thin film's surface.

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