Abstract
In the enhanced ARE and vacuum evaporation process, MnBi films were prepared by sequential deposition of Bi and Mn. In vacuum evaporation, MnBi cannot be formed constantly due to Mn oxidization. In the enhanced ARE process, utilization of Ar + 10% H2 mixture gas is effective in preventing Mn oxidization. The preferred crystal orientation with the c axis normal to the film plane is hardly observed in Bi films. In annealing Bi-Mn films, the preferred orientation appeared and then the MnBi growth along the Bi c axis was followed. In MnBi films, the preferred orientated crystallites with the c axis increase with ionization degree.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.