Abstract
In the enhanced ARE and vacuum evaporation process, MnBi films were prepared by sequential deposition of Bi and Mn. In vacuum evaporation, MnBi cannot be formed constantly due to Mn oxidization. In the enhanced ARE process, utilization of Ar + 10% H2 mixture gas is effective in preventing Mn oxidization. The preferred crystal orientation with the c axis normal to the film plane is hardly observed in Bi films. In annealing Bi-Mn films, the preferred orientation appeared and then the MnBi growth along the Bi c axis was followed. In MnBi films, the preferred orientated crystallites with the c axis increase with ionization degree.
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