Abstract
SrBi2Ta2O9(SBT) films were prepared on Pt/Ti/SiO2/Si substrates by the spin-coating technique, and they were annealed by 28 GHz millimeter-wave heating method. It was revealed that the annealed films were crystallized at a lower temperature than those by conventional electric furnace heating. For clarifying the difference in the interaction of the radiation with each materials of the substrate, transmission, reflection and absorption properties of various silicon substrates were measured by a low power millimeter-wave radiation. It was found that the carrier density of substrates exceedingly influenced millimeter-wave absorption. In the case of a low carrier density, the substrates were almost transparent for the millimeter-wave, while in the case of a high carrier density the reflection was dominant.
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