Abstract
Photoresponsive organic field-effect transistors (phOFETs) were fabricated by utilizing organic heterojunction based on pentacene and lead phthalocyanine (PbPc). Under a near-infrared light illumination (wavelength 808 nm and a power intensity of 124 mW/cm2), the heterojunction photoresponsive organic field-effect transistors (HJ-phOFETs) exhibited a maximum photosensitivity of 4.4×104, and a maximum photoresponsivity of 118 mA/W, which were 766 times and 785 times higher than that of PbPc single-layer phOFET, respectively. It was observed that the maximum photosensitivity and the maximum photoresponsivity stabilized around 5.4×104 and 326 mA/W after 120 h, respectively. The high performance of HJ-phOFET is attributed to the utilization of PbPc as photosensitive layer which has high absorbance in near infrared region (NIR) and pentacene as channel layer with high hole mobility. These results indicate that the HJ-phOFET based on pentacene and PbPc is proved to be a NIR photodetector with excellent photosensitivity and stability.
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