Abstract
The paper is concerned with the finishing characteristics by a new finishing process employing Liquid-Bonded Wheel with high finishing pressure varying from 0.1-0.6MPa. The bond strength of this wheel is smaller than those of any other grinding wheels, resulting in the decrease of the removal unit. The number of active abrasive grains in this process is however more than that in conventional finishing process. And the removal rate increases in proportion to the finishing pressure, for all load is subjected to abrasive grains under even high pressure. Consequently both a high removal rate and a very smooth surface can be achieved at high finishing pressure. A removal rate of about 7 μm/min and a surface finish of 0.05 μm Rz is obtained for the finishing of silicon monocrystal wafers with pressure of 0.4 MPa by using SiC grains (mean diameter=5μm) in this process. Moreover, the removal rate increases in proportion to the finishing speed too under even high speed up to 30 m/min in this process, for the strong cohesiveness of abrasive grain in this wheel against the centrifugal force. And further, it becomes clear that type of polishing fluid, type of abrasive grains and grain size effect on the finishing characteristics in this process
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