Abstract
We have grown epitaxial Al/Al2O3 multilayer structure on Si (111) substrates by the ionized cluster beam (ICB) method. The crystallinity and electrical properties were investigated for the multilayer structure. In situ observation of RHEED patterns for Al and Al2O3 layers of the multilayer structure showed that epitaxial growth of Al on Al2O3 and of Al2O3 on Al was achieved, and the interface between Al and Al2O3 layers was flat. In addition, the experimental and theoretical results on the electrical properties showed that a tunneling current was observed and the breakdown field was 5×107 V/cm, when the Al2O3 thickness was a few monolayers.
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