Abstract
Traditional macroscopic method is incapable of describing the heat generation and transfer mechanism in high-power electronic devices, when either characteristic dimensions become comparable or less than the mean free path of phonons,or characteristic timescale of devices equals to or smaller than the relaxation time of phonons. In order to reveal the heat generation and transfer mechanism in micro/nano-scale devices, a multiscale lattice Boltzmann modeling of field effect transistor (FET) with different conditions is proposed. In this model, a source term is introduced to describe the scattering of phonons and electrons. Under different working conditions and thermal managements (such as the location of hot spot, peak value of temperature, average temperature),the temperature distribution of a FET is investigated. By analyzing heat generation and transfer mechanism of FET in micro/nano-scale, it provides theoretical reference to engineers.
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