Abstract
Fabrications of gated field emitter array (FEA), such as Si-FEA and Spindt-type FEA, is overviewed from the conventional method to the latest one. The invention of an etch-back method makes it possible to form the gate electrode on the emitter tip, irrespective of the emitter shape, and also possible to form the multi-stacked gate electrode for beam focusing. A hafnium carbide coating can enhance the electron emission and emission lifetime, significantly. The historical Spindt-type FEA fabrication is also progressing. Using a double-layered photoresist, instead of aluminum parting layer, makes it possible to apply the multi-gate formation even on the Spindt-type FEA. These FEAs are applicable for many kinds of attractive devices, such as ultra-high sensitive image sensor, radiation tolerant electronics, and stationary X-ray source for medical applications.
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