Топологические изоляторы в электронных и спинтронных устройствах

Abstract

Background: Topological insulators (TIs) are materials with distinctive features, including insulating interiors and conducting surface states protected by time-reversal symmetry. These features make TIs extremely promising for electrical and spintronic device applications, where manipulating electron spin without charge transfer is advantageous. Objective: This study aims to investigate of TIs to improve the performance and efficiency of electrical and spintronic devices. We look at the special qualities of TIs that may be used to improve device functionality, such as reduced power consumption and higher operational speed. Methods: To investigate electron transport behaviour on the surfaces of different TIs, we used a mix of quantum mechanical models and experimental settings. Devices based on bismuth telluride (Bi2Te3) and thallium arsenide (TlAs) were built to test their performance in real-world applications. Results: TI devices showed considerable gains in spin transport efficiency and thermal stability compared to conventional materials. Spintronic devices based on TIs demonstrated a 50% reduction in energy usage and a 30% improvement in data processing speed. Conclusion: Including topological insulators in electrical and spintronic devices offers a promising path to more efficient and speedier technologies. Future research should concentrate on the scalable integration of TIs into commercial devices and the discovery of novel materials with topological insulating characteristic.