Abstract
We successfully grew Co2Cr1-xFexAl full Heusler films (0 ≤ x ≤ 1) with the L21 structure onto GaAs(001) substrates by achieving stoichiometry in an ultrahigh-vacuum molecular beam epitaxy chamber. The films develop epitaxial crystallinity with the relationship of Co2Cr1-xFexAl(001)‹110›||GaAs(001)‹110›, which induces very strong uniaxial magnetocrystalline anisotropy, except for x = 0. For x = 1, in particular, the film is almost a single phase and its magnetic moment per formula unit exhibits Slater-Pauling behavior. Films of this type were used to fabricate magnetic tunnel junctions with 8.8% and 4.9% tunnel magnetoresistance (TMR) ratios at room temperature for x = 1 with an Al-O tunnel barrier and x = 0.6 with a MgO barrier, respectively. The TMR ratio can be further enhanced by both realizing an L21 single phase and eliminating lattice distortion.
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