Abstract
The processes of crystallization of amorphous germanium films of various thicknesses and multilayer germanium/silicon nanostructures under isothermal annealing (T=440 oC) were studied. Samples were grown on glass substrates using the method of plasma-chemical deposition. The phase composition of the structures was determined from the analysis of Raman spectra. It was found that 200 nm thick germanium film almost completely crystallizes after two hours of annealing, while crystalline nuclei with a volume fraction of less than 1% only appear in a 6 mm thick germanium film. Four-hour annealing of a thin film leads to a noticeable increase in the nuclei size and the crystallinity fraction increases to 40%. Annealing of a-Ge (6nm) nanolayers embedded in a-Si matrix under the same conditions for 2 and 4 hours does not even lead to partial crystallization, the layers remain amorphous. The influence of interfaces on the crystallization of germanium layers is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
