Abstract
We have observed the quantum Hall-effect (QHE) of ZnO/MgxZn1−xO bilayers grown on ScAlMgO4 substrates by using pulsed-laser deposition. Two-dimensional electron gas was spontaneously formed in the interface due to the polarization mismatch between the layers. In order to obtain high electron mobility, we first developed a high-temperature annealed buffer layer, and then carefully investigated the growth temperature dependences of surface morphologies and electrical properties. As the result, electron mobility was recorded to be 440 cm2/Vs at room temperature and 5500 cm2/Vs at 1 K. The observation of QHE allows to access direct determination of the electronic structure of the heterointerface.
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