Влияние ультразвуковой обработки поверхностей пластин кристаллического кремния на физические свойства устройств солнечной энергетики

Abstract

The paper concerns technologies of alternative energy, in particular, solar energy. The research discusses the results change in optical parameters of silicon plates influences due to ultrasonic machining. For experiments, the crystalline con plates of p-type of the conductivity are used for solar cells manufacturing are chosen. We have made ultrasonic chining of a surface of silicon plates by means of the special device. The device consists of the mainframe of mechanl influence, the air compressor and the of ultrasonic frequency generator. The mainframe of mechanical influence is pplied by system of adjustment of air pressure, a vibrator, working cylinders of mechanical vibration transmission, a herical micro-probe from firm metal, the channel of pressure transfer upon the vibrator. The roughness of a surface and factor of reflexing from a surface depending on length of a wave of an incident ht before and after machining are measured. On the basis of LSM-images received and an estimation of roughness d also measurements of light reflexing factor, the surface texturing mechanism which can be used for production of gh effective solar cells is offered. Moreover, we have researched the influence of ultrasonic machining of a surface silicon plates for life period of the minority charge carriers in silicon plates before processing by means of the spel device. For measurement of life time of minority charge carriers in silicon plates before machining, we have emoyed the method of quasi-stationary photoconductivity based on contactless measurement of conductivity of a plate influence of pulse radiation allowing to spend an estimation of sizes of effective life time of minority charge carri. The received experimental results, physical interpretation of processes of light absorption in the plates subjected ultrasonic machining and change of life time of the photo-generated carriers of a charge allow us to recommend a w way of increase of silicon solar cells efficiency.