Abstract
PURPOSE:To obtain a thin film crystal having decreased surface defects by maintaining an extremely high vacuum state in a growth chamber, then applying ultrasonic oscillation to a liquid nitrogen shroud and stripping the sublimatable element depositing and sticking to the shroud prior to the start of growth. CONSTITUTION:After the extremely high vacuum state is maintained by a pump 2 in the growth chamber 1, the ultrasonic oscillation is applied via an oscillation transmission bar 9 to the outside wall of the liquid nitrogen shroud by an ultrasonic oscillation machine 8 fixed to the outside wall of the growth chamber 1 prior to the growth. The sublimatable element depositing and sticking to the shroud 6 is stripped to clean the shroud 6. A compd. semiconductor crystal contg. the sublimatable element (e.g.: As) as the constituting element is subjected to molecular beam epitaxy. The contamination of a substrate 5 and a molecular beam source 3 by the intrusion of the film of the sublimatable element stripped from the shroud 6 during the crystal growth is averted.
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