Abstract
Spectral features of the original and irradiated with electrons with E = 2 MeV GaP light emitting diodes (LEDs) were studied. Recombination lines of the exciton bound on the N isoelectronic center and on the pair complexes NN1 were detected. The change in the spectral composition of radiation when passing through a section of negative differential resistance is analyzed. Dose dependences of luminescence intensity were obtained for green GaP(N) and red GaP(Zn-O) LEDs. The maximum critical radiation dose was established, after which the LEDs lost their characteristic exciton emission mechanism. The results of the annealing of irradiated LEDs are given.
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