Abstract
The magnetoresistive Ag-Fe (amorphous alloy system) thin films were deposited on silicon substrates at room temperature by an rf magnetron sputtering system. The magnetoresistive properties of the samples was investigated in relation to the sputtering conditions, to increase the magnetoresistance of the as-deposited thin films at room temperature. The maximum magnetoresistance of 1.9% (at 200 kA/m) was found in the sample with sputtering rf power at 125 W, gas pressure at 2 Pa, and film thickness of about 200 nm.
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