Abstract
Magnetic properties of Ni-Fe ultra thin films with a Ru capping layer were investigated for application to magnetic random access memory units (MRAMs). The sample structure, which simulated an MRAM free layer, is Si-sub./SiO2/Ni-Fe(tnm)/CL (7 nm; CL=Ru, Ta). The Ni-Fe thin films less than 3 nm thick show low coercive fields of less than 1 Oe because of employment of the Ru capping layer. Moreover, from evaluation of the magnetization of the Ni-Fe films, we found that the Ru capping layer results in less dead-layer formation in comparison with a conventional Ta capping layer. The Ru capping layer is valuable for MRAM use in terms of low coercive magnetic field and effective thickness control.
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